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Clas-SiC expands technology in its stride - News
Founded in 2017, Clas-SiC Wafer Fab is the world’s first open foundry dedicated to SiC. At our facility, located in Lochgelly on the outskirts of Scotland’s capital city, Edinburgh, we have adopted a pure-play approach, which means that we’ll never be in competition with our device customers.
DARPA awards $3M for heterogenous integration research
Oct 31, 2024 · The University of Michigan has won $3M funding to develop CMOS-compatible, defect-free universal growth of III-N and III-V multilayer heterostructures on silicon.
Advancing GaN power devices with ammonia MBE
Dec 5, 2024 · THE LAST FEW YEARS have seen a surge in demand for efficient power devices. It’s a ramp that’s been spurred on by the rise of a number of next-generation technologies, including fast chargers, data centres, smart grids, high-speed telecommunication, and …
Vertical power devices with thick GaN layers on sapphire
Dec 6, 2024 · µ Dominating the headlines of our industry are the vast sums spent on building new SiC fabs and expanding the capacity in existing facilities. In general, such efforts are directed at increasing production of 1.2 kV MOSFETs, a key component in electric vehicles that is helping to maximise their range.
SICC shows first 300mm SiC wafer - News
Nov 13, 2024 · At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC substrate. SICC already makes 150mm and 200mm N-type conductive SiC, and high-purity semi-insulating substrates.
Realising high-performance sensors with heterogeneous integration
Dec 5, 2024 · In quite a number of applications there is much demand for scalable, low-cost, high-performance sensors. Such sensors are wanted for autonomous systems, robotics, defence and aerospace technologies, artificial intelligence (AI), mobile phones, smart watches, and augmented reality/virtual reality (AR/VR).
Innoscience releases top-side cooled GaN HEMTs - News
Dec 4, 2024 · nnoscience Technology has introduced four of its GaN-on-silicon e-mode HEMTs in its En-FCQFN top-side cooling package, resulting in better thermal performance.
Multi-junction solar cells: The hunt for 50 percent - News
Dec 6, 2024 · When it comes to photovoltaic conversion efficiencies, III−V multi-junction solar cells are the gold standard. For the past three decades this class of compound semiconductor devices has been breaking record efficiencies and pushing the limits of photovoltaic technologies.
MicroLEDs for next generation AI? - News
Nov 27, 2024 · A research group at Nitride Technology Centre (NTC) at TU Braunschweig in Germany, aims to make future computers more powerful and energy-efficient by using neuromorphic processing based on microLEDs.