In this article, a novel SiC trench MOSFET with integrated Schottky super barrier rectifier (SSBR-TMOS) is proposed and studied by TCAD simulations. The SSBR is introduced as a replacement of the body ...

Abstract: In this paper we present first results of a 4.5kV/1500A IGBT module using new LOCOS (Local Oxidation of Silicon) Trench Oxide IGBTs (LTO-IGBT). It is shown that this new module with ...